Flip Chip Bonder (CoS)
Toray Engineering's Flip Chip Bonder for Chip on Wafer is capable of stacking applications in various programs for handling 3D packaging, and is applicable for multiple processes and devices, such as flux, NCP, NCF, Cu pillars, and TSV.
FEATURES
FEATURES
Able to handle 95x250mm substrate
A variety of temperature, pressure, and height profile settings are possible due to its own unique ceramic heater, and control method for pressure and position
Able to achieve high accuracy (±2 μm) with its moving search function and highly stiff frame
Able to achieve the most appropriate gap with its unique head gap control function
Can be used for low pressure to high pressure regions by changing over the head
ADVANTAGES
ADVANTAGES
1.5μm(3σ) high-precision positioning
Rapid heating heater (200℃/sec @ □22mm)
Controllable bonding height, suitable for C4 and Cu pillar processes
Maximum bonding force of 490N, suitable for high-density multi-pin chips
PRODUCT SPECIFICATIONS
PRODUCT SPECIFICATIONS
| FC3000L2 (for Chip on Substrate) | ||
|---|---|---|
| Machine Type |
|
|
| Substrate Size (mm) |
125–250 mm long x 40–95 mm wide (t=0.2–1.0 mm) |
|
| Chip size (mm) | Thermo-compression Bonding*1 |
3.0–20 mm long x 3.0–20 mm wide (t=0.05–1.0 mm) |
| Ultra-low Pressure Bonding |
3.0–20 mm long x 3.0–20 mm wide (t=0.05–1.0 mm) |
|
| Chip Type | Wafer: 1 | |
| Chip Orientation*2 | Face up (Wafer 8", 12") | |
| Cycle Time*3 | 1.8 sec/chip | |
| Alignment Accuracy (3σ)*4 | ±2μm (X,Y) | |
| Pressurization Force (N) | High-stiffness Head | 9.8 – 490 |
| Ultra-low Pressure Head | 0.098 – 9.8 | |
| Bonding Head Type | Ceramic heater head: temperature RT–450℃ | |
*Notes：
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Large-sized chip (max. 30.0 mm long x 30.0 mm wide) can be processed as an option.
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8" wafer and waffle tray can be processed with options.
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Cycle time does not include processing time (i.e. searching, bonding and vacuum release).
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Accuracy measurement is taken using Toray-standard substrates.
