Non-Destructive Inspection System for SiC Crystal Killer-Defects
JadeSiC-NK is a non-destructive inspection system specifically designed for SiC substrates, providing an efficient alternative to KOH etching method. This system pioneers non-destructive defect inspection, directly providing insight to SiC substrates wafer mapping for killer defects distribution, thereby effectively monitoring the quality of SiC substrates and significantly reducing costs.
PRODUCT DESCRIPTION
PRODUCT DESCRIPTION
The Best Substitution for KOH Etching Method！
Industry first technology for non-destructive defect inspection for SiC substrates
Direct insight to SiC substrates wafer mapping for killer defects distribution
Effective monitor the quality of SiC substrates
Significant costs reduction comparing to KOH etching by avoid etching SiC substrates
FEATURES
FEATURES
Detect and identify defects on the surface and inside of SiC substrates with advanced NLO (non-linear optics) technology
Non-destructive inspection to replace costly KOH etching method
Whole SiC wafer defect scanning ability provides more accurate defect density distribution over the sampling interpolation of KOH etching method
Focus on killer defects (BPD, TSD, MicroPipe, Stacking Fault) detection for SiC substrates
Support 2”,4”,6”,8” SiC substrates inspection
Optional function of MicroArea 3D scan available
ADVANTAGES
ADVANTAGES
Effective inspection and analysis tool to improve wafer process yield and significantly reduce direct and indirect production costs
No costly SiC substrate wasted, free of toxic, corrosive and hazardous material
JadeSiC-NK performs whole wafer scanning to more accurately present killer defect density distribution, as opposed to using traditional optical image sampling interpolation
The best tool for continuous production process improvement
FUNCTION DESCRIPTION
FUNCTION DESCRIPTION
【Benefits】
Effectively and reliably detect and identify killer crystal defects of SiC
Significantly reduce direct and indirect costs, which transfer to increase SiC substrate output compared to KOH etching method
State-of-the-art tool for SiC substrate production process improvement
- Low-cost DOE (Design Of Experiment)
- 100% inspection on extracted substrates out of one ingot for detailed ingot level quality analysis
- Enable effective tracking and analyzing ingots made by different batch or furnace
PRODUCT SPECIFICATIONS
PRODUCT SPECIFICATIONS
| Model Number | SP3055A | |
|---|---|---|
| Model Name | JadeSiC-NK, non-destructive inspection system for SiC killer defects (BPD/TSD/MP/SF), the best substitution for KOH etching method. | |
| SiC Substrate / EPI Wafer Size |
2” 4” 6” 8” | |
| Wafer Thickness | 300 μm - 550 μm | |
| Chuck | XY Stage Repeatability : 0.1 μm | |
| Inspection Items | Whole Wafer Defect Scan (MicroPipe, BPD, TED, TSD, SF, etc.) | |
| Whole Wafer Defect Scan | Estimated Inspection Time |
1 hr @4”wafer |
| Lateral Resolution | 1 μm | |
| Analysis |
MicroPipe Density (MPD) BPD/TED/TSD Density Stacking Fault Area Percentage Wafer Yield Tri-angle and Carrot** |
|
| MicroArea 3D Scan (optional) | Field of View |
400 μm x 400 μm |
| Scanning Zoom |
Yes ( 1x - 10x ) |
|
| Scan Resolution |
Up to 1024 x 1024 |
|
| Lateral Resolution |
0.4 μm |
|
| Axial Resolution |
0.25 μm |
|
| Min. Increment of Z stage |
0.02 μm |
|
| Wide Field Module Camera |
Color Camera |
|
